| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a micropattern having pitches and the line width of between two thirds and a half of conventional ones. SOLUTION: The patterns in the exposure field are divided into two groups of patterns and a two-layer resist composed of a lower resist film and an upper resist film is used. The upper resist film is exposed to an exposure light beam with a band of wavelengths by which only the upper resist film is sensed into a shape corresponding to the divided first group of patterns. After the upper resist pattern is formed by development, parts of the lower resist film exposed between the traces of the upper resist pattern are exposed to an exposure light beam with short wavelengths which can hardly pass through the upper resist pattern and senses the lower resist pattern into a pattern shape corresponding to the divided second group of patterns and development is performed.</p> |
