发明名称 |
EVALUATION DEVICE OF NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS EVALUATING METHOD, AND NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To accurately evaluate the characteristics of a cell in a flash memory array. SOLUTION: This evaluation device of a non-volatile semiconductor memory provided with a group of flash memory cells in series connection, comprises plural flash memory cells (101-104), and the gate (100C) of each flash memory cell is commonly connected respectively, and the source or drain of the flash memory cell is connected to the source or drain of an adjacent flash memory cell.</p> |
申请公布号 |
JP2002074998(A) |
申请公布日期 |
2002.03.15 |
申请号 |
JP20000252209 |
申请日期 |
2000.08.23 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HASHIZUME TAKAHIKO;KOTAKE YOSHINORI |
分类号 |
G01R31/28;G11C16/02;G11C29/06;G11C29/12;G11C29/50;H01L21/28;H01L21/66;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C29/00;H01L21/824 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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