发明名称 EVALUATION DEVICE OF NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS EVALUATING METHOD, AND NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To accurately evaluate the characteristics of a cell in a flash memory array. SOLUTION: This evaluation device of a non-volatile semiconductor memory provided with a group of flash memory cells in series connection, comprises plural flash memory cells (101-104), and the gate (100C) of each flash memory cell is commonly connected respectively, and the source or drain of the flash memory cell is connected to the source or drain of an adjacent flash memory cell.</p>
申请公布号 JP2002074998(A) 申请公布日期 2002.03.15
申请号 JP20000252209 申请日期 2000.08.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HASHIZUME TAKAHIKO;KOTAKE YOSHINORI
分类号 G01R31/28;G11C16/02;G11C29/06;G11C29/12;G11C29/50;H01L21/28;H01L21/66;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C29/00;H01L21/824 主分类号 G01R31/28
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