| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a ZnO oxide semiconductor layer which can significantly increase the carrier concentration of a p-type layer in the ZnO oxide semiconductor layer and a method for manufacturing a semiconductor light-emitting device having a superior property of light emission by improving a crystal state of the ZnO oxide. SOLUTION: A material source Zn and O that compose the ZnO oxide, and a dopant source N, which is provided by having nitrogen, i.e., p-type dopant, in plasma state, are supplied so as to make the material source that composes the ZnO oxide rich in Zn, and thereby the p-type ZnO oxide semiconductor layer 9 grows on the substrate 8. |
