SUPER JUNCTION SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable a rapid operation of a super junction semiconductor device with a low on resistance and having a drift layer made of a parallel p-n layer allowing a current to flow in a on state and depleted in an off state. SOLUTION: A repeating pitch (p2) of a trench 14 for embedding a gate electrode 16 is set larger than a repeating pitch (p1) of the parallel p-n layer 11. In this case, an n-type deep region may be interposed between a p-type partition region and a p-type well region.