CHEMICAL VAPOR PHASE THIN-FILM GROWTH METHOD OF SILICON SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a chemical vapor phase thin-film growth method for obtaining a thin film having the same quality as, or better quality than a conventional thin film by inhibiting the generation of slip dislocation of a silicon semiconductor substrate while reducing a film formation temperature. SOLUTION: In the chemical vapor phase thin-film growth method for growing a thin film on the silicon semiconductor substrate surface by using a rotary vapor growth thin-film formation device for supplying a feed gas so that it flows down from an upper portion to the rotating silicon semiconductor substrate surface, a monosilane gas is used as the effective constituent of the feed gas for forming the thin film, and a thin-film growth reaction is made under the reduced pressure of 2.7×102-6.7×103 Pa, a silicon semiconductor substrate speed of 500-2000 min-1, and a reaction temperature of 600-800 deg.C.