| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method by which a polycrystalline silicon semiconductor used for the pixel switch or driving circuit of a liquid crystal display device can be mass-produced with a high yield. SOLUTION: In the course of laser annealing, a thin amorphous silicon film is crystallized to a thin polycrystalline silicon film by irradiating the silicon film with a laser beam while the silicon film is moved. The occurrence of undesired particles from the silicon film is suppressed before annealing the silicon film by generating a gas flow from a sealed box 41 which is positioned to a working position where the silicon film is irradiated with the leaser beam or its vicinity, is filled up with one or more kinds of gases, and has an opening which enables the laser beam to be emitted so that the gas may flow outward from the box 41 and, at the same time, in the advancing direction of a table which moves the amorphous silicon film in a prescribed direction from the rear side in the advancing direction at the time of annealing the thin amorphous silicon film.
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