| 摘要 |
PURPOSE: To provide an integrated semiconductor circuit device which can prevent electrostatic breakdown in a device electrostatic charge model(CDM). CONSTITUTION: The integrated semiconductor circuit device is provided with a plurality of input/output terminals, a first reference potential wiring as a common discharge wire for the plurality of input/output terminals, an input/ output protective element which is connected between the plurality of input/ output terminals, and the first reference potential wiring and a substrate potential wiring which is connected to a substrate potential generation circuit used to generate a substrate potential. A clamping element is connected between the first reference potential wiring and the substrate potential wiring. |
