发明名称 CHARGED-PARTICLE BEAM EXPOSURE METHOD, RETICLE AND MANUFACTURING METHOD OF DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a charged-particle beam exposure method or the like, by which a high pattern dimensional accuracy can be attained and the cost can be held down at a low value. SOLUTION: A design pattern to be formed on an induction substrate is set (S21), and the correction of a pattern shape for correcting the proximity effect is calculated regarding the design pattern (S22). A reticle pattern data is prepared, referring to the result of the calculation of the correction of the pattern shape (S23). An actually used reticle is prepared on the basis of the reticle pattern data (S24). A variable shaped beam type electron-beam drawing device is used in this case, and dose adjustment is executed.
申请公布号 JP2002075830(A) 申请公布日期 2002.03.15
申请号 JP20000258612 申请日期 2000.08.29
申请人 NIKON CORP 发明人 OKINO TERUAKI
分类号 G03F1/20;G03F1/68;G03F7/20;H01J37/305;H01J37/317;H01L21/027 主分类号 G03F1/20
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