发明名称 DICING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To prevent the peeling of a semiconductor chip 35 and an end piece 36 near a periphery section 33 when dicing a semiconductor wafer 23 attached onto a wafer sheet 22 without increasing the adhesive force of the wafer sheet 22. SOLUTION: The periphery section 33 of the semiconductor wafer 23 is partially diced in a thickness direction from the surface for setting remaining thickness d2 to 10 to 100μm. At an inner semiconductor chip formation section 34 surrounded by the periphery section 33, notching is made over the entire thickness direction for cutting. At the periphery section 33, the movement speed of a blade 29 is set faster than that at the semiconductor chip formation section 34 (v2<v1<v3), and the flow rate of cutting water is decreased at the periphery section 33 at a downstream side in a movement direction (q1=q2>q3).
申请公布号 JP2002075919(A) 申请公布日期 2002.03.15
申请号 JP20000260344 申请日期 2000.08.30
申请人 SHARP CORP 发明人 KIRIHARA TAKESHI
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
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