发明名称 ALUMINUM NITRIDE BOARD AND SEMICONDUCTOR PACKAGE USING IT
摘要 PROBLEM TO BE SOLVED: To provide an aluminum nitride board or a semiconductor package preventing the swelling of a metallized layer and preventing the jetting of nitrogen gas during sealing. SOLUTION: In the aluminum nitride board providing an oxide film on the whole face, particle growth more than the need of metal particles constituting the metallized layer is prevented by making the film thickness of an oxide film existing on a part providing the metallized layer 0.3-2μm and making a difference between the maximum value and the minimum value of the film thickness 0.2μm or less. Thereby the swelling of the metallized layer can be suppressed. In addition, the jetting of nitrogen gas can be suppressed by providing the similar oxide film on the sealing part of the package.
申请公布号 JP2002076192(A) 申请公布日期 2002.03.15
申请号 JP20000260286 申请日期 2000.08.30
申请人 TOSHIBA ELECTRONIC ENGINEERING CORP;TOSHIBA CORP 发明人 HATORI TAKAE
分类号 C04B41/80;H01L23/08;H01L23/15;(IPC1-7):H01L23/15 主分类号 C04B41/80
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