| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an electrostatic breakdown resistance is strengthened by avoiding and suppressing a breakdown of a gate oxide film, and to provide a method for manufacturing the same. SOLUTION: When a gate electrode 8 of an upper part of a region, in which an N+-type source region 6 is not disposed and the gate electrode 8 is not effectively formed on a channel region, is removed, the electrostatic breakdown of a gate oxide film 7 can be avoided. In addition, a film thickness of the gate insulating film directly under the gate electrode of the region is selectively formed thicker than that of the gate insulating film of the region except the gate insulating film. Or, a backside of the gate insulating film directly under the gate electrode of at least the region is directly coupled to a second conductivity type well region, and a new second conductivity type region is formed in a first conductivity type drain region direction to be selectively covered all over to thereby obtain a similar effect.
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