| 摘要 |
PROBLEM TO BE SOLVED: To prevent a dielectric film from coming into contact with a bonding layer interposed between a platinum-family metal film for composing the lower electrode of a capacitor and a silicon oxide film. SOLUTION: On the inner wall of a groove 29 opened in the silicon oxide film 24, the lower electrode 32 of the capacitor C for accumulating information is formed. At the interface between an Ru film 32a for composing the lower electrode 32 and the silicon oxide film 24, the bonding layer composed by a TaN film 30 is interposed for preventing the interface between the Ru film 32a and silicon oxide film 24 from peeling off when the dielectric film 34 accumulated on the lower electrode 32 is heat-treated. Also, the upper end section of the TaN film 30 for composing the bonding layer is recessed to the lower portion than the opening end section of the groove 29, and is completely covered with the Ru film 32a for composing the lower electrode 32. |
