PHOTOLITHOGRAPHY METHOD USING SUPREMELY ANALYTICAL NEAR FIELD STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a photolithography method by which a photoresist pattern having narrow line widths is formed by using a supremely analytical near field structure. SOLUTION: The photolithography method which is performed to expose a semiconductor chip 40 having a substrate 52 and a photoresist film 54 includes a step of forming the supremely analytical near field structure 62 provided with a first dielectric film 56, a second dielectric film 60, and an active film 58 sandwiched between the films 56 and 60 on the photoresist film 54; and a step of exposing the photoresist film 54 with a beam 64 through the structure 62. When the beam 64 passes through the structure 62, the structure 62 increases the optical intensity of the beam 64 and reduces the diameter of the beam 64.