| 摘要 |
PROBLEM TO BE SOLVED: To solve the contradiction for forming a high frequency analog circuit with an SOI structure that such contradicting conditions are required that a low impurity concentration is suited to an SOI MOSFET body, in order to set an adequate threshold voltage but a high impurity concentration is suited for lowering an equivalent resistance to stabilize the body potential even during operating and obtain good characteristics. SOLUTION: An MOSFET body composed of a source 101, a drain 102 and a gate 103 on a buried oxide film layer 106 has a two-layer structure composed of an upper layer 104 having a low concentration and a lower layer 105 having a high concentration, and a potential is given to the body.
|
