| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high reliability that can improve a step coverage property of an upper conductive layer (metal wiring) by performing an etchback or an Ar sputter etch on the entire surface of the interlayer insulating film again after a W plug is formed in a contact hole. SOLUTION: The semiconductor device where the oxide film is provided on the semiconductor substrate and an opening part 44 is formed thereon, comprises a nitride film 43b which is provided on the oxide film 43a, a metal material 45 that is buried in the opening part 44 so as to protrude from the top surface of this nitride film 43b higher than the film thickness of this nitride film 43b, and a wiring layer 46 that is provided on the metal material 45 to be protruded.
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