METHOD OF MANUFACTURING EPITAXIAL WAFER AND EPITAXIAL WAFER MANUFACTURED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer having intrinsic gettering capability of contaminant metals during device manufacturing process. SOLUTION: First, a nitrogen doped silicon single crystal rod is pulled up by Czochralski method, and sliced into silicon wafers. Next, the silicon wafer is held at a specific temperature in the range of 600 to 850 deg.C for 5 to 180 min., and risen to a specific temperature in the range of 1,100 to 1,150 deg.C at a rate of 5 to 20 deg.C/sec. After the temperature rise, hydrogen pretreatment is performed at the specific temperature for the wafer. Thereafter, under the condition that the silicon wafer is held at a specific temperature in the range of 1,050 to 1,150 deg.C, an epitaxial layer is formed on the surface of the silicon wafer. Then, the silicon wafer is fallen to a specific temperature in the range of 600 to 850 deg.C at a rate of 5 to 20 deg.C/second, and held at the specific temperature for 5 to 180 minutes.