| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for preventing a variation in device characteristics caused by contamination of the rear face of a wafer by boron. SOLUTION: The manufacturing method includes a step of forming a first oxide film 21a on the surface of a substrate 1 and a second oxide film 21b on the rear face of the substrate 1 by heating the substrate, a step of removing partly the first oxide film 21a and forming an opening part 21c in the first oxide film 21a, a step of covering the first oxide film 21a with resist 24 and the surface of the substrate 1 within the opening part 21c with resist 24, a step of removing the resist 24, and a step for diffusing impurity in the substrate 1 through the opening part 21c and forming an impurity diffusion layer on the surface side of the substrate 1.
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