| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film-forming device that does not require large investment for facilities and wide installation space even if a new MOS- manufacturing line is to be created to evaluate the quality of a wafer, eliminates the need for preserving a plurality of kinds of devices and systems even if a plurality of kinds of wafers having different diameters are to be treated, and does not require any remodeling of a transport system, a sample stand, or the like. SOLUTION: The thin-film-forming device used in the electrode formation process of a MOS that is manufactured to evaluate the quality of the wafer comprises the sample stand 4 for placing the silicon wafer 2, a patterning means 1 that has an electrode-like opening 1a and is arranged on the silicon wafer 2 placed on the sample stand 4, and a target 6 for supplying materials for forming the thin film.
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