| 摘要 |
PROBLEM TO BE SOLVED: To realize a non-destruction read-out by which signal electric charges can be read out without destruction when the signal of a memory array constituted of a capacitor and a switching transistor. SOLUTION: At the time of reading out the signal of a memory cell, one end of the cell is connected to an input terminal of an inversion amplifier through a signal line SL2, and the other end is connected to the output of the inversion amplifier through a signal line SL1, and signal voltage VBout is obtained from an output of the inversion amplifier. As influence of parasitic capacity Cp on a signal line is reduced to 1/Av when open loop gain of the inversion amplifier is assumed to Av by performing these read-out, the gain of the inversion amplifier is made high and influence can be prevented, and the read-out can be performed without destroying signal electric charges.
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