| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method, by which high-performance and highly reliable semiconductor devices can be mass-produced by using a silicon film crystallized by using a catalyst element as an active region of the semiconductor device and sufficiently reducing the amount of the catalyst element in the device region after the crystallization. SOLUTION: In the method of manufacturing the semiconductor device, catalyst element nickel 104 is introduced into an amorphous silicon film 103 formed on an insulation substrate 101 to accelerate crystallization, and the crystallization is performed by heat treatment. Next, an element phosphorus 108 selected from group V row B is selectivity introduced into the part of the silicon film 103, high speed heat anneal process is performed, and the catalyst element nickel 104 is moved to the region where the element phosphorus 108 is introduced. Then, an active (for channel) region is formed by using the silicon film in the region other than the region into which the element selected from group V row B is introduced. This can greatly reduce the amount of the catalyst element left in the active region of the semiconductor device.</p> |
