SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To overcome the problem of a prior art such that a number of steps is increased due to a complicated manufacturing steps when a TFT having a LDD structure or a TFT having a GODL structure is conventionally intended to be formed. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of adopting the TFT using a p-channel TFT 155 having a low off- current for a pixel 150, forming an n-channel TFTs 153 and 154 each having the GODL structure as a TFT of a drive circuit 149, and forming the TFT with five photomasks.