SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a conductive film on a seed layer or a barrier metal film in recesses by electroplating while avoiding causing filling failures. SOLUTION: After forming vias 108 and wiring trenches 109 in an insulation film on a semiconductor substrate 100, a second Ru barrier metal film 110 and a copper seed layer 111 are deposited in this order to the bottoms and the walls of the vias 108 and the trenches 109. By electroplating, a copper plating film 112 is grown on the seed layer 111 to perfectly fill up the vias 108 and the trenches 109. The seed layer 111 and the plating film 112 are integrated to form a wiring copper film 113, thereby forming vias 114 and second wirings 115 from the copper film 113.