| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for changed particle beam exposure by which charged particle beam exposure can be performed with high pattern accuracy even when the exposure is difficult at an exposure data dimension W, by performing a graphic change on the exposure data dimension W to make the half-valve width of forward scattered intensity distribution equal to a designed dimension W0. SOLUTION: The exposure data dimension W becomes the minimum beam size at which a charged particle beam exposure system can stably emit a charged particle beam as a result of a graphic changer or smaller. Or the half width of the forward scattered intensity distribution does not become equal to the designed dimension even when the exposure data dimension is made zero. At any one of the above two cases, the exposure data dimension is set at the minimum beam size.
|
