| 摘要 |
PROBLEM TO BE SOLVED: To provide an amorphous silicon semiconductor photoelectric conversion multiplier device wherein carriers are prevented enough from being injected into it from the external, and its produced carriers themselves can be outputted efficiently. SOLUTION: The photoelectric conversion device is manufactured as a pin photodiode wherein an i-type semiconductor layer made of amorphous silicon is interposed between p- and n-conductivity layers. Further, the large energy band gap of the p-conductivity layer is made not smaller than 3.3 eV, and it is created out of a transparent p-conductivity oxide whose conductivity is 10-2/Ωcm or higher.
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