| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a large stress is less likely to be generated, in an interface between a metal of a storage capacity and a ferroelectric. SOLUTION: A switching transistor is formed in the semiconductor substrate. As the storage capacity connected to this transistor, a lower electrode, a dielectric film connected to the lower electrode, and an upper electrode contacted with the dielectric film, are formed. In this case, at least one of each of mean particle sizes of crystal grain boundaries of the lower electrode, the dielectric film and the upper electrode is made smaller than one-tenth of the largest width of the lower electrode. Thus, stresses generated in the interface are diffused in the bonding surfaces of the grain boundaries.
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