| 发明名称 |
METHOD FOR DECREASING PROBLEMS RELATED TO RECESSED PLANE FORMATION DURING TRENCH INSULATING STRUCTURE FORMATION |
| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a trench insulating structure having substantially flat surface. SOLUTION: A void (14) of a trench (4) is filled with a silicon film, and the silicon film is polished as deposited or after oxidizing, thereby, forming a trench insulating structure having a flat upper surface.
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| 申请公布号 |
JP2002076110(A) |
申请公布日期 |
2002.03.15 |
| 申请号 |
JP20010168642 |
申请日期 |
2001.06.04 |
| 申请人 |
AGERE SYSTEMS GUARDIAN CORP |
发明人 |
CHITTIPEDDI SAILESH;ANKINEEDO BERAGA;NANDA ARUN KUMAR |
| 分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
| 代理机构 |
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