发明名称 SEMICONDUCTOR MEMORY AND ITS TEST METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory and its test method which can perform easily a test utilizing a high voltage. SOLUTION: This device is a semiconductor memory comprising first and second memory arrays 1, 3 having a normal operation mode and a test mode and sense amplifiers 13, 15 comprising bit lines BL1, BL2, transistors NT1-NT8 connected between the first and the second memory cell arrays 1.3 and the sense amplifiers 13, 15, a VDD pre-charge circuit 9 supplying VDD voltage to gates of the transistors NT1-NT8 in a normal mode, also the device is provided with a VPP pre-charge circuit 11 supplying VPP voltage being higher than VDD voltage to gates of the transistors NT1-NT8 in a test mode.
申请公布号 JP2002074989(A) 申请公布日期 2002.03.15
申请号 JP20000259579 申请日期 2000.08.29
申请人 FUJITSU LTD 发明人 TSUBOI KOUKEI;FUJIOKA SHINYA;NISHIMURA KOICHI
分类号 G01R31/28;G01R31/3185;G11C7/06;G11C29/06;G11C29/50;(IPC1-7):G11C29/00;G01R31/318 主分类号 G01R31/28
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