| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method having a plurality of kinds of drain currents in the case that a plurality of non-volatile memory transistors exist and charge is injected into a floating gate. SOLUTION: The semiconductor device includes a plurality of the non-volatile memory transistors 100, 200. The non-volatile memory transistors 100, 200 have the floating gates 120, 220 arranged by interposing first insulation layers 112, 212 on a semiconductor board 10, second insulation layers 140, 240 coming into contact with at least a part of the floating gates 120, 220, control gates 150, 250 formed on the second insulation layers 140, 240, and source areas 114, 214 and drain areas 116, 216 formed in the semiconductor board 19. The volume of the floating gates 120, 220 have two kinds or more.
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