发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To surely carry out trimming of a copper fuse with an infrared region laser. SOLUTION: A copper fuse 1 and a copper wiring 5 that could be cut by a laser beam are formed on a silicon substrate so that the film thickness of the copper fuse 1 is thinner than that of the other copper wiring 5 in the same layer. Further by covering a side surface part and a lower surface part of copper 1a, 5a with barrier metal 1b, 5b at the copper fuse 1 and the copper wiring 5, an absorption factor of the laser beam 4 is improved, an uncut remainder is reduced, and leakage is decreased. These are manufactured by using a damascene method.
申请公布号 JP2002076129(A) 申请公布日期 2002.03.15
申请号 JP20000268228 申请日期 2000.09.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 IDO YASUHIRO;IWAMOTO TAKESHI
分类号 H01L21/3205;H01L21/82;H01L23/52;H01L27/10;(IPC1-7):H01L21/82;H01L21/320 主分类号 H01L21/3205
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