| 摘要 |
PROBLEM TO BE SOLVED: To form an IIL element that has a high breakdown voltage and a high reverse current amplification factor. SOLUTION: Two kinds of dopants that have different diffusion rates are introduced into a P-type semiconductor substrate 10, and an N-type semiconductor epitaxial growth layer 15 is subsequently developed on substrate 10. A buried layer 22 is thus formed and an N+-type well 23 is formed on this buried layer 22. The N+-type well 23 does not reach a surface layer part of the epitaxial growth layer 15. At the surface layer part of this epitaxial growth layer 15, a first and a second P-type diffusion regions 31, 32 that become components of the IIL element 30 are formed. As a result, because the second P-type diffusion region 32 can be made a comparatively deep junction, the breakdown voltage can be improved. By providing the N+-type well 23 right under the second P-type diffusion region 32, the reverse current amplification factor can be increased.
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