发明名称 |
METHOD OF FORMING OHMIC ELECTRODE ON DIAMOND AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an ohmic electrode that makes a good ohmic contact on diamond. SOLUTION: After a diamond like carbon film 2 is formed on a diamond substrate 1, the diamond like carbon film 2 is heat-treated in a hydrogen atmosphere, and a metal film is formed on the heat-treated diamond like carbon film 2 to be an electrode 3. By forming the electrode after forming the diamond like carbon film 2 by the heat-treatment in the hydrogen atmosphere, the ohmic contact characteristic of the electrode 3 is remarkably improved.
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申请公布号 |
JP2002076008(A) |
申请公布日期 |
2002.03.15 |
申请号 |
JP20000265658 |
申请日期 |
2000.09.01 |
申请人 |
KASHIWAGI TOSHISUKE;SHIMADZU CORP |
发明人 |
KASHIWAGI TOSHISUKE;KONISHI YOSHIYUKI |
分类号 |
H01L21/28;H01L21/322;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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