发明名称 METHOD OF FORMING OHMIC ELECTRODE ON DIAMOND AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an ohmic electrode that makes a good ohmic contact on diamond. SOLUTION: After a diamond like carbon film 2 is formed on a diamond substrate 1, the diamond like carbon film 2 is heat-treated in a hydrogen atmosphere, and a metal film is formed on the heat-treated diamond like carbon film 2 to be an electrode 3. By forming the electrode after forming the diamond like carbon film 2 by the heat-treatment in the hydrogen atmosphere, the ohmic contact characteristic of the electrode 3 is remarkably improved.
申请公布号 JP2002076008(A) 申请公布日期 2002.03.15
申请号 JP20000265658 申请日期 2000.09.01
申请人 KASHIWAGI TOSHISUKE;SHIMADZU CORP 发明人 KASHIWAGI TOSHISUKE;KONISHI YOSHIYUKI
分类号 H01L21/28;H01L21/322;(IPC1-7):H01L21/322 主分类号 H01L21/28
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