| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of difficulty in forming an N-type diffusion region with liquid impurity source. SOLUTION: An impurity raw solution containing organic phosphorus compound as a conductivity type determining impurity and a solvent is applied on a semiconductor substrate 1, and a liquid impurity source layer 2 is formed and dried. The substrate 1 is heated at a temperature lower than the phosphorus diffusion temperature and the phosphorus is diffused in the semiconductor substrate 1. After that, a film remaining on the surface of the substrate 1 is removed with hydrofluoric acid to form an ohmic electrode.
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