| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces a parasitic capacitance of interconnections without increasing the number of manufacturing steps, and to provide its manufacturing method. SOLUTION: A silicon nitride film 4 is formed on surfaces of metal interconnection 3 that are exposed from a silicon oxide film 2 and on the silicon oxide film 2, and opening parts 5, 6 through which the metal interconnection 3 and the silicon oxide film 2 are exposed in this silicon nitride film 4 respectively are formed. Further, a silicon oxide film 7 is deposited, an interconnecting via 10 and a structure supporting via 11 that are connected to the metal lines 3 and the silicon nitride film 4 respectively, are formed by opening this silicon oxide 7. Further, the silicon nitride film 12 is formed, and the opening parts 13, 14 through which the interconnecting via 10 and the silicon oxide 7 in this silicon nitride film 12 are exposed respectively, are formed. Further, the silicon oxide film 15 is deposited, and the second metal interconnection 15 that is connected to the interconnecting via 10 via the opening part 13 of the silicon nitride film 12 is formed by opening this silicon oxide film 15, and then silicon oxide films 2, 7, 15 are removed.
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