| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that film corrosion is observed in a disk obtained by successively stacking a first dielectric layer 12, a second dielectric layer 13, a recording layer 14, a third dielectric layer 15, a fourth dielectric layer 16 and a reflecting layer 17 on a disk substrate 11 and further disposing a protective layer on the reflecting layer in a close contact state when the disk is put to a high temperature and high humidity test. SOLUTION: (1) A barrier layer 19 containing the nitride, oxide, carbide or oxynitride of an element α (α is at least one element selected from Sn, In, Zr, Si, Cr, Al, Ta, V, Nb, Mo, W, Ti, Mg and Ge) is disposed between the fourth dielectric layer and the reflecting layer. (2) The thickness of the barrier layer containing the element α is adjusted to 1-20 μm. |
