| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiN film that has a small amount of leakage current even if film thickness is reduced to 0.4 nm or less, and a semiconductor device that uses the SiN film as a capacitor insulating film. SOLUTION: In a pressure reduction CVD device, an ammonia-family gas and SiCl4 are supplied as a raw material of N and Si, respectively, onto the SiN film formed by allowing an Si substrate to be subjected to thermal nitriding, and a CVD-SiN film is deposited at temperature of 650 deg.C or less and 550 deg.C or more. |
