OHMIC ELECTRODE STRUCTURE, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING OHMIC ELECTRODE

摘要

PROBLEM TO BE SOLVED: To enable a p-type SiC region in a fine contact window to have a low contact resistance ρc. SOLUTION: An ohmic electrode structure has an SiC substrate 1, p-type SiC area 2 formed on the surface of the substrate 1, thermally reacted layer 8 formed on the surface of the area 2, thermally oxidized film 3 covering the interface between the substrate 1 and area 2, upper insulating film 4 arranged on the surface of the oxidized film 3, and electrode film 7 arranged on the reacted layer 8. The electrode film 7 is connected with a blank wiring conductor chip 9. The reacted layer 8 is upwardly protruded from the surface of the SiC area 2. The oxidized film 3 has an opening through which the reacted layer 8 is passed and is arranged in contact with the surface of the substrate 1 so as to cover the interface between the substrate 1 and area 2. The upper insulating film 4 has a composition or density which is different from that of the thermally oxidized layer 3.