| 摘要 |
PROBLEM TO BE SOLVED: To surely take a body contact in a DMOS transistor. SOLUTION: A method for manufacturing a semiconductor device comprises the step of forming a cross-shaped mask 64 for forming a cross-shaped active region on a single crystal silicon layer 16 of an SOI substrate. The method also comprises the step of then forming a resist mask 66 for exposing base end sides of predetermined sides 70 and 72. The method also comprises the steps of then implanting a first conductivity type impurity ion 76 in the silicon layer 16 under sides 70, 71, 72 and 73, and forming connectors 78. The method also comprises the steps of thereafter removing the resist film 66, oxidizing the silicon layer 16, and forming a cross-shaped active region 82 partitioned by an isolation region 80. The method further comprises the steps of providing a gate electrode on the region 82, then implanting an impurity for a channel in the active region to diffuse the impurity in a lateral direction, and connecting the gate electrode to the connector.
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