FIELD EFFECT SEMICONDUCTOR DEVICE HAVING MULTIDIMENSIONAL CONFINEMENT QUANTUM WELL

摘要

PROBLEM TO BE SOLVED: To freely adjust the threshold voltage Vth of a fined element in spite of a scaling rule on a field effect semiconductor device having a multidimensional confinement quantum well. SOLUTION: Inverse regular polygonal cone-type dots 3 formed of semiconductors with lower energy that a carrier senses than the semiconductors constituting a channel layer 1 or V-groove-like quantum thin wires are installed within the range of a distance where the carrier can thermally move from a two-dimensional carrier gas layer 4 at an operation temperature.