| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor element having stable characteristics with little variations to obtain a high-performance semiconductor device having a high integration degree by a convenient and high-yield manufacturing process. SOLUTION: Catalytic element Ni 105 for accelerating crystallization is selectively introduced in an active (channel) regions of the semiconductor device, i.e., regions 100 of an amorphous silicon film 103 not covered with a mask 104. Using silicon film regions 103a crystal-grown by heating as seeds, second crystallized regions 103c are grown in a melt-solidifying process to result in a very high quality crystalline silicon film. The second crystallized regions 103c effectively take over a microscopically good crystal component (columnar crystal component) of the crystallized regions 103a by the catalytic element and are crystal-grown from an amorphous state. Hence, defects are very little in the regions, the same as in the crystallization by the usual melt-solidification.
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