发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device provided with a level shift circuit that can sufficiently be in operation even when a ratio 'Vcc/Vdd' of a voltage Vdd before level shift to a voltage Vcc after the level shift is desirably increased. SOLUTION: The semiconductor integrated circuit device is provided with the level shift circuit (consisting of f1-f4) that has an input node receiving an input signal D with a level of (Vss-Vdd) and an output node providing an output of an output signal Q with a level of (Vss-Vcc), with a current mirror circuit (consisting of f13-f12) that charges the output node, and a switch circuit (consisting of f5-f8) that activates the current mirror circuit until the output signal Q is inverted after the input signal D is inverted.
申请公布号 JP2002076882(A) 申请公布日期 2002.03.15
申请号 JP20000268849 申请日期 2000.09.05
申请人 TOSHIBA CORP 发明人 TOKAI YOICHI
分类号 G05F3/26;H03K3/356;H03K19/0175;H03K19/0185;(IPC1-7):H03K19/018 主分类号 G05F3/26
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