| 摘要 |
A method of plasma treating titanium nitride (TiN) films at temperatures that are compatible with carbon-based dielectric layers is disclosed. The titanium nitride (TiN) film is formed by thermally decomposing a titanium based compound on a substrate having a carbon-based dielectric layer thereon. Thereafter, the titanium nitride (TiN) film is plasma treated. During the titanium nitride (TiN) film plasma treatment, the substrate is maintained at a temperature less than about 360 DEG C. The substrate is preferably maintained at a temperature less than about 360 DEG C using a backside gas which conducts heat away from the substrate. The titanium nitride (TiN) film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium nitride (TiN) film is incorporated into a damascene structure. |
