| 发明名称 |
In-situ electroplated oxide passivating film for corrosion inhibition |
| 摘要 |
A method an apparatus for making copper metallic interconnects for semiconductors having an oxide layer deposited in the copper in situ during the deposition of the copper within the via.
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| 申请公布号 |
US2002030282(A1) |
申请公布日期 |
2002.03.14 |
| 申请号 |
US20010953706 |
申请日期 |
2001.09.17 |
| 申请人 |
AGERE SYSTEMS, INC. |
发明人 |
MERCHANT SAILESH MANSINH;MISRA SUDHANSHU;ROY PRADIP KUMAR |
| 分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
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