SEMICONDUCTOR DEVICE HAVING A CHANNEL-CUT DIFFUSION REGION IN A DEVICE ISOLATION STRUCTURE

摘要

A flash memory device includes a channel-cut diffusion region underneath a field oxide film wherein the channel-cut diffusion region is formed in correspondence to a gap formed between a polysilicon pattern forming a floating gate electrode and an adjacent polysilicon pattern forming an adjacent floating gate electrode, wherein the floating gate electrode carries a side wall pattern at an edge surface defining said gap and wherein the adjacent floating gate electrode carries a side wall pattern also at an edge surface defining said gap at the opposite side.