发明名称 Semiconductor device and electron device
摘要 A semiconductor device having a multilayer structure, wherein a first wafer unit used as a wafer base, other wafer units, and a circuit board are bonded in series through bumps formed on wafer unit surfaces, thereby to form a stacked-wafer-unit 3D structure. The structure makes the semiconductor device thinner, smaller in size and lighter in weight, and it can be manufactured and mass-produced by employing conventional equipment.
申请公布号 US2002030273(A1) 申请公布日期 2002.03.14
申请号 US20010949786 申请日期 2001.09.12
申请人 IWAMOTO TAKASHI;YOSHIMURA MAKOTO 发明人 IWAMOTO TAKASHI;YOSHIMURA MAKOTO
分类号 H01L25/18;H01L23/48;H01L25/065;H01L25/07;(IPC1-7):H01L23/48 主分类号 H01L25/18
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