| 摘要 |
<p>A method and a device for producing a composite oxide thin film easily at low temperatures, which provide an excellent crystallinity, control a basic unit lattice structure, and require no post-treatment; and a composite oxide thin film, especially, a Cu-based high-temperature superconducting thin film produced thereby. A discharge supply layer (1) and a superconducting layer (2) constituting a Cu-based high-temperature superconducting thin film are sputtered by alternately controlling in film thickness a charge supply layer-use target having the composition of the charge supply layer (1) and a superconducting layer-use target having the composition of the superconduction layer (2), and the alternate sputters are repeated a required number of times to produce a Cu-based superconducting thin film having a desired film thickness. For the charge supply layer-use target, a charge supply layer-composition target is used in which part of Cu is substituted by an element having a structure stabilizing effect.</p> |
