| 摘要 |
<p>A monolithic semiconductor photo-coupler device comprises a substrate made of semiconductor material, and a groove made in one face of substrate to receive and align an optical fiber. A wall of given thickness is formed in the semiconductor material of the substrate in the prolongation of the groove and transversally to this groove. A p-doped region an intrinsic semiconductor region and the a n-doped region in the wall form a p-i-n photodetector capable of converting an optical signal from an optical fiber placed in the groove to an electric signal. When placed in the groove, the optical fiber is in direct alignment with the photodetector. The present invention is also concerned with a method for fabricating the above described monolithic semiconductor photo-coupler device.</p> |
