发明名称 |
THIN FILM SEMICONDUCTOR DEVICE HAVING A BUFFER LAYER |
摘要 |
A thin film semiconductor device having improved operating characteristics and reliability of a thin film transistor formed on a glass substrate. The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal. The surface of the glass substrate 1 is covered by a buffer layer 2. The thin film transistor 3 formed on this buffer layer 2 has a polycrystalline semiconductor thin film 4 as an active layer. The buffer layer 2 includes at least a silicon nitride film and protects the thin film transistor 3 from contamination by alkali metals such as Na and has a thickness such that it can shield the thin film transistor 3 from an electric field created by localized alkali metal ions (Na+).
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申请公布号 |
US2002030188(A1) |
申请公布日期 |
2002.03.14 |
申请号 |
US19960730015 |
申请日期 |
1996.10.11 |
申请人 |
HAYASHI HISAO;SHIMOGAICHI YASUSHI;KATO KEIJI |
发明人 |
HAYASHI HISAO;SHIMOGAICHI YASUSHI;KATO KEIJI |
分类号 |
H01L29/786;(IPC1-7):H01L31/20;H01L31/037;H01L31/036;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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