发明名称 Method for manufacturing diffusion barrier layer
摘要 A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer. A refractory metal layer or a nitride layer of refractor metal is formed on the substrate and a top surface and a sidewall of the patterned copper layer. The refractory metal layer or the nitride layer of refractor metal is converted by HDP treatment into an implanted layer as a diffusion barrier layer, where gas of N2, O2, NH3, NO2, or N2O are used for producing implanting ions. A thermal process is performed to stabilize a diffusion barrier quality of the oxygen-containing implantation layer.
申请公布号 US2002031908(A1) 申请公布日期 2002.03.14
申请号 US20010865341 申请日期 2001.05.24
申请人 TSENG HORNG-HUEI 发明人 TSENG HORNG-HUEI
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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