| 摘要 |
<p>A group-III nitride semiconductor the productivity, heat dissipation ability, and high-speed operation characteristics of which are improved. An epitaxial growth layer (13) made of a group-III nitride semiconductor is formed on a buffer layer (12) formed on a sapphire substrate (11) having a major surface of face A ((11-20) face). A gate electrode (16), a source electrode (15), and a drain electrode (17) are formed on the epitaxial growth layer (13). The thickness of the single crystal sapphire substrate is below 100 νm.</p> |
