| 摘要 |
A cleaning method in a semiconductor fabrication process includes providing a dilute composition consisting essentially of phosphoric acid and acetic acid and exposing a surface, e.g., aluminum, to the dilute composition. For example, the dilute composition includes phosphoric acid at a concentration of about 5% or less by volume and acetic acid at a concentration of about 30% or less by volume. Further, the cleaning method may use a composition comprising phosphoric acid and acetic acid, wherein the composition includes phosphoric acid at a concentration of X%, wherein X is about 5% by volume or less, and acetic acid at a concentration of about (100-X%) by volume or less. The cleaning method may be used, for example, in fabricating interconnect structures, aluminum containing structures, and multilevel interconnect structures. Cleaning compositions for use in the cleaning methods are also provided.
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